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| MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE16204/D Designer'sTM Data Sheet SCANSWITCHTM MJE16204 POWER TRANSISTORS 6.0 AMPERES 550 VOLTS -- VCES 45 AND 80 WATTS NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors The MJE16204 is a state-of-the-art SWITCHMODETM bipolar power transistor. It is specifically designed for use in horizontal deflection circuits for 20 mm diameter neck, high and very resolution, full page, monochrome monitors. * * * * * * * * 550 Volt Collector-Base Breakdown Capability Typical Dynamic Desaturation Specified (New Turn-Off Characteristic) Application Specific State-of-the-Art Die Design Isolated or Non-Isolated TO-220 Type Packages Fast Switching: 65 ns Inductive Fall Time (Typ) 680 ns Inductive Storage Time (Typ) Low Saturation Voltage: 0.4 Volts at 3.0 Amps Collector Current and 400 mA Base Drive Low Collector-Emitter Leakage Current -- 100 A Max at 550 Volts -- VCES High Emitter-Base Breakdown Capability For High Voltage Off Drive Circuits -- 9.0 Volts (Min) Case 221D is UL Recognized at 3500 VRMS: File #E69369 IIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIII I I I II I I I IIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIII I I III I I I IIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII I I III I I I IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII I I III I I I IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIII I I I III I I I IIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIII I I I III I I I IIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIII * MAXIMUM RATINGS Rating Symbol VCES MJE16204 550 250 8.0 -- -- -- Unit Vdc Vdc Vdc V Collector-Emitter Breakdown Voltage Collector-Emitter Sustaining Voltage Emitter-Base Voltage VCEO(sus) VEBO VISOL RMS Isolation Voltage(2) (for 1 sec, TA = 25_C, Rel. Humidity < 30%) Per Fig. 14 Per Fig. 15 Per Fig. 16 Collector Current -- Continuous -- Pulsed (1) Base Current -- Continuous -- Pulsed (1) IC ICM IB IBM PD 6.0 8.0 2.0 4.0 0.2 Adc Adc mJ Repetitive Emitter-Base Avalanche Energy W(BER) Total Power Dissipation @ TC = 25_C Total Power Dissipation @ TC = 100_C Derated above TC = 25_C 80 32 0.64 Watts W/_C _C CASE 221A-06 TO-220AB MJE16204 Operating and Storage Temperature Range TJ, Tstg - 55 to 150 THERMAL CHARCTERISTICS Characteristic Symbol RJC TL Max 260 Unit _C Thermal Resistance -- Junction to Case 1.56 _C/W Lead Temperature for Soldering Purposes 1/8 from the case for 5 seconds (1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle 10%. (2) Proper strike and creepage distance must be provided. * Measurement made with thermocouple contacting the bottom insulated mounting surface of the package (in a location beneath the die), the device mounted on a heatsink thermal grease applied, and a mounting torque of 6 to 8 inSlbs. v Designer's Data for "Worst Case" Conditions -- The Designer's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves -- representing boundaries on device characteristics -- are given to facilitate "worst case" design. Preferred devices are Motorola recommended choices for future use and best overall value. SCANSWITCH, SWITCHMODE and Designer's are trademarks of Motorola, Inc. (REPLACES MJF16204) (c) Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 1 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII III I I I I IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I IIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII III I I I I IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I IIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII III I I I I IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I IIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII MJE16204 (1) Pulse Test: Pulse Width = 300 s, Duty Cycle SWITCHING CHARACTERISTICS DYNAMIC CHARACTERISTICS ON CHARACTERISTICS (1) OFF CHARACTERISTICS (1) ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Inductive Load (Table 2) (IC = 3.0 A, IB = 400 mA) Storage Fall Time Collector-Heatsink Capacitance (Mounted on a 1 x 2 x 1/16 Copper Heatsink, VCE = 0, ftest = 100 kHz) Emitter-Base Turn-Off Energy (EB(avalanche) = 500 ns, RBE = 22 ) Gain Bandwidth Product (VCE = 10 Vdc, IC = 1.0 A, ftest = 1.0 MHz) Output Capacitance (VCE = 10 Vdc, IE = 0, ftest = 100 kHz) Dynamic Desaturation Interval (IC = 3.0 A, IB1 = 400 mA) DC Current Gain (ICE = 6.0 Adc, VCE = 5.0 Vdc) Base-Emitter Saturation Voltage (IC = 3.0 Adc, IB = 400 mAdc) Collector-Emitter Saturation Voltage (IC = 1.0 Adc, IB = 133 mAdc) (IC = 3.0 Adc, IB = 400 mAdc) Collector-Emitter Sustaining Voltage (Table 1) (IC = 10 mAdc, IB = 0) Emitter-Base Breakdown Voltage (IE = 1.0 mA, IC = 0) Emitter-Base Leakage (VEB = 8.0 Vdc, IC = 0) Collector Cutoff Current (VCE = 550 Vdc, VBE = 0 V) 2 hFE , DC CURRENT GAIN VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 60 50 20 30 10 7 3 0.5 5 - 55C TJ = 100C 25C 0.7 Figure 1. Typical DC Current Gain 1 3 5 2 IC, COLLECTOR CURRENT (AMPS) Characteristic v 2.0%. VCE = 5 V 7 10 0.1 0.1 0.3 0.2 1 0.7 0.5 10 7 5 2 3 VCEO(sus) V(BR)EBO VCE(sat) VBE(sat) Symbol Motorola Bipolar Power Transistor Device Data EB(off) Cc-hs IEBO ICES Cob hFE tds tsv tfi fT 0.2 Figure 2. Typical Collector-Emitter Saturation Voltage 0.3 IC, COLLECTOR CURRENT (AMPS) TJ = 25C TJ = 100C Min 250 8.0 8.0 10 -- -- -- -- -- -- -- -- -- -- -- 0.5 0.7 1 0.25 0.4 Typ 680 65 325 3.0 6.6 0.9 90 50 14 11 -- -- -- 2 1500 150 Max 150 100 1.5 0.6 1.0 20 10 -- -- -- -- -- -- 3 IC/IB1 = 10 5 Adc Adc MHz Unit 7.5 5 Vdc Vdc Vdc Vdc pF pF J ns ns -- 7 MJE16204 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) TJ = 25C VBE, BASE-EMITTER VOLTAGE (VOLTS) 30 20 10 7 5 3 2 1 0.7 0.5 0.3 0.2 IC = 1 A 2A 3A 6A 10 7 5 3 2 1 0.7 0.5 0.3 0.2 0.1 0.3 TJ = 25C TJ = 100C IC/IB1 = 5 to 10 0.1 0.07 0.05 0.03 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 IB, BASE CURRENT (AMPS) 1 2 3 0.5 0.7 1 2 3 5 7 10 20 30 IC, COLLECTOR CURRENT (AMPS) Figure 3. Typical Collector-Emitter Saturation Region Figure 4. Typical Base-Emitter Saturation Voltage 10K f T, TRANSITION FREQUENCY (MHz) 5K 3K 2K C, CAPACITANCE (pF) 1K 500 300 200 100 50 30 20 10 0.1 0.2 0.3 0.5 Cob TC = 25C Cib 20 18 16 14 12 10 8 6 4 2 1 2 3 5 10 20 30 50 100 200 300 500 1K VR, REVERSE VOLTAGE (VOLTS) 0 0 0.5 1 1.5 2 2.5 3 IC, COLLECTOR CURRENT (AMPS) VCE = 10 V ftest = 1 MHz TC = 25C Figure 5. Typical Capacitance Figure 6. Typical Transition Frequency SAFE OPERATING AREA 10 7 5 3 2 1 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 3 5 10 30 200 250 20 50 70 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 7 TC = 25C 7 IC, COLLECTOR CURRENT (AMPS) MJE16204 10 s 6 5 4 3 2 1 0 50 150 250 350 450 550 IC/IB1 5 TJ 100C VBE(off) = 0 V VBE(off) = 5 V IC, COLLECTOR CURRENT (AMPS) dc 1 ms SECONDARY BREAKDOWN WIREBOND LIMIT THERMAL LIMIT VCE(pk), PEAK COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 7. Maximum Forward Biased Safe Operating Area Figure 8. Maximum Reverse Biased Safe Operating Area Motorola Bipolar Power Transistor Device Data 3 MJE16204 SAFE OPERATING AREA INFORMATION FORWARD BIAS There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 7 is based on TC = 25_C; T J(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC 25_C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 7 may be found at any case temperature by using the appropriate curve on Figure 9. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. REVERSE BIAS For inductive loads, high voltage and high current must be sustained simultaneously during turn-off, in most cases, with the base-to-emitter junction reverse biased. Under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current. This can be accomplished by several means such as active clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as Reverse Biased Safe Operating Area and represents the voltage-current condition allowable during reverse biased turnoff. This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. Figure 8 gives the RBSOA characteristics. + V 11 V 1 SECOND BREAKDOWN DERATING POWER DERATING FACTOR 0.8 0.6 THERMAL DERATING 0.4 0.2 0 20 40 60 80 100 120 140 160 TC, CASE TEMPERATURE (C) Figure 9. Power Derating Table 1. RBSOA/V(BR)CEO(sus) Test Circuit 0.02 F H.P. 214 OR EQUIV. P.G. 0 - 35 V 0.02 F 50 500 100 T1 0V T1 +V *IC L T.U.T. MR856 *IB 50 Vclamp VCC IB2 V(BR)CEO L = 10 mH RB2 = VCC = 20 Volts RBSOA L = 200 H RB2 = 0 VCC = 20 Volts RB1 selected for desired IB1 Note: Adjust - V to obtain desired VBE(off) at Point A. IB IB1 VCE -V IC VCE(pk) IC(pk) + - RB2 2N5337 + - 100 2N6191 20 10 F RB1 A 1 F [ -V Lcoil (ICpk) VCC A T1 adjusted to obtain IC(pk) *Tektronix *P-6042 or *Equivalent 4 Motorola Bipolar Power Transistor Device Data MJE16204 Table 2. High Resolution Deflection Application Simulator + 24 V + C1 100 F U2 MC7812 G VO VI N D C2 10 F + Q2 MJ11016 (IB) R1 1k 6.2 V R5 1k (IC) Q5 MJ11016 R7 2.7 k R8 9.1 k R9 470 + R10 47 C3 10 F C6 100 F + LY C4 0.005 (DC) R2 R510 SYNC Q1 R3 250 R6 1k 7 O S 8 %C 6 VCC C5 0.1 R10 470 1W Q3 MJE 15031 100 V D2 MUR460 CY 1 G OUT U1 N D MC1391P 2 T1 R12 470 1W LB Q4 DUT R4 22 VCE D1 MUR110 BS170 T1: Ferroxcube Pot Core #1811 P3C8 Primary/Sec. Turns Ratio = 18:6 Primary Inductance Gap: LP = 250 H LB = 0.5 H CY = 0.01 F LY = 13 H 2K 200 t s , STORAGE TIME (ns) TC = 25C tf , FALL TIME (ns) 1K 700 500 ICI/B1 = 7.5 100 70 50 ICI/B1 = 7.5 10 TC = 25C 10 300 200 1 2 3 5 IC, COLLECTOR CURRENT (AMPS) 7 30 20 1 2 3 5 IC, COLLECTOR CURRENT (AMPS) 7 10 Figure 10. Typical Collector Current Storage Time in Deflection Circuit Simulator Figure 11. Typical Collector Current Fall Time in Deflection Circuit Simulator Motorola Bipolar Power Transistor Device Data 5 MJE16204 DYNAMIC DESATURATIION COLLECTOR-EMITTER VOLTAGE (VOLTS) tfi 90% IC(pk) VCE IC VCE = 20 V 0 tsv 0 0% IB 10% IC(pk) 5 VCE 4 DYNAMIC SATURATION TIME IS MEASURED FROM VCE = 1 V TO VCE = 5 V 3 2 1 0 tds TIME (ns) Figure 12. Deflection Simulator Switching Waveforms From Circuit in Table 2 The SCANSWITCH series of bipolar power transistors are specifically designed to meet the unique requirements of horizontal deflection circuits in computer monitor applications. Historically, deflection transistor design was focused on minimizing collector current fall time. While fall time is a valid figure of merit, a more important indicator of circuit performance as scan rates are increased is a new characteristic, "dynamic desaturation." In order to assure a linear collector current ramp, the output transistor must remain in hard saturation during storage time and exhibit a rapid turn-off transition. A sluggish transition results in serious consequences. As the saturation voltage of the output transistor increases, Figure 13. Definition of Dynamic Saturation Measurement the voltage across the yoke drops. Roll off in the collector current ramp results in improper beam deflection and distortion of the image at the right edge of the screen. Design changes have been made in the structure of the SCANSWITCH series of devices which minimize the dynamic desaturation interval. Dynamic desaturation has been defined in terms of the time required for the VCE to rise from 1.0 to 5.0 volts (Figures 12 and 13) and typical performance at optimized drive conditions has been specified. Optimization of device structure results in a linear collector current ramp, excellent turn-off switching performance, and significantly lower overall power dissipation. 6 Motorola Bipolar Power Transistor Device Data MJE16204 1 0.7 0.5 D = 0.5 0.2 0.2 0.1 0.07 0.05 0.1 0.05 0.02 0.02 0.01 0.01 SINGLE PULSE 0.02 0.05 0.1 0.2 0.5 1 0.01 RJC(t) = r(t) RJC RJC = 1.56C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RJC(t) 2 5 t, TIME (ms) 10 20 50 P(pk) r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) t1 t2 DUTY CYCLE, D = t1/t2 100 200 500 10 k Figure 14. Typical Thermal Response for MJE16204 Motorola Bipolar Power Transistor Device Data 7 MJE16204 PACKAGE DIMENSIONS B 4 SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. F C T A S -T- Q 123 H K Z L V G D N U R J DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 --- --- 0.080 BASE COLLECTOR EMITTER COLLECTOR MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 --- --- 2.04 STYLE 1: PIN 1. 2. 3. 4. CASE 221A-06 TO-220AB ISSUE Y Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE (602) 244-6609 INTERNET: http://Design-NET.com JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 8 Motorola Bipolar Power Transistor Device Data *MJE16204/D* MJE16204/D |
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